Laboratory 
for Electrical 
Properties of 
Semiconductors 

NanoNews

Our latest article on core-shell GaN-AlOx/HfOx nanowires has been published in the esteemed Small journal. In the work, we pay attention on the challenge of preserving high efficiency of GaN-based system in normal conditions. We propose the oxide coverage as the solution, and we investigate their influence on the nanowires properties. We show the particular performance enhancement can be achieved with decrease of shells thickness, providing the balance between advantages and disadvantages oh shells deposition. For more detail, we invite you to see the open access article (link.